FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 6

• Manufacturer Part Number: FMG2G150US60E
• Description: IGBT MOLDING 600V 150A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G150US60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.84nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2002 Fairchild Semiconductor Corporation
10000
1000
Fig 13. Switching Loss vs. Collector Current
1000
Fig 15. SOA Characteristics
Fig 17. RBSOA Characteristics
1000
100
100
0.1
10
10
1
1
0.3
0
I
I
C
C
Common Emitter
V
R
T
T
Single Nonrepetitive
Pulse T
V
R
Single Nonrepetitive
Pulse T
Curves must be derated
linerarly with increase
in temperature
CC
C
C
G
MAX. (Pulsed)
MAX. (Continuous)
GE
G
40
= 25
= 125
= 2.0
= 2.0
= 300V, V
= 15V
100
0
C
Ω
0
C
J
C
Ω
Collector-Emitter Voltage, V
= 25
Collector-Emitter Voltage, V
GE
125
60
= +/- 15V
1
200
Collector Current, I
80
DC Operation
300
10
100
400
C
[A]
500
1
120
CE
CE
100
[V]
[V]
100us
600
Eoff
Eon
140
50us
1000
700
Fig 16. Turn-Off SOA Characteristics
Fig 18. Transient Thermal Impedance
Fig 14. Gate Charge Characteristics
1E-3
0.01
100
500
0.1
15
12
10
9
6
3
0
1
1
10
0
1
-5
Common Emitter
R
T
C
L
= 2
= 25
100
Ω
10
-4
Collector-Emitter Voltage, V
Rectangular Pulse Duration [sec]
V
CC
200
= 100 V
Gate Charge, Qg [ nC ]
10
10
-3
300
10
Safe Operating Area
V
-2
400
GE
= 20V, T
100
10
200 V
500
-1
T
IGBT
DIODE :
C
CE
C
= 100
= 25
[V]
300 V
10
600
o
:
FMG2G150US60E Rev. A
C
0
1000
700
10
1