FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 4

• Manufacturer Part Number: FMG2G150US60E
• Description: IGBT MOLDING 600V 150A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G150US60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.84nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2002 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
320
280
240
200
160
120
80
40
20
16
12
0
5
4
3
2
1
0
8
4
0
0
0
0
Common Emitter
T
Common Emitter
V
Common Emitter
T
C
GE
Temperature at Variant Current Level
C
= 25
= 25
= 15V
Collector - Emitter Voltage, V
30
4
Gate - Emitter Voltage, V
2
I
Case Temperature, T
C
= 80A
20V
60
8
15V
150A
4
12V
300A
90
12
C
[ ]
GE
GE
CE
[V]
6
[V]
120
16
V
GE
I
= 10V
C
300A
150A
= 80A
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
180
160
140
120
100
300
250
200
150
100
50
80
60
40
20
20
16
12
0
0
8
4
0
0.1
0.3
0
Duty cycle : 50%
T
Power Dissipation = 200W
Common Emitter
V
T
T
C
Common Emitter
T
GE
C
C
C
= 100
= 25
= 125
= 125
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
I
C
1
= 80A
Frequency [Khz]
8
V
Load Current : peak of square wave
CC
= 300V
10
150A
12
300A
GE
GE
CE
100
[V]
[V]
16
10
FMG2G150US60E Rev. A
1000
20
20