FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 5

• Manufacturer Part Number: FMG2G150US60E
• Description: IGBT MOLDING 600V 150A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G150US60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.84nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2002 Fairchild Semiconductor Corporation
1000
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
100
35000
30000
25000
20000
15000
10000
100
10
5000
0.5
0
1
Common Emitter
V
R
T
T
Common Emitter
V
I
T
T
C
C
C
CC
G
C
C
CC
40
= 25
= 125
= 150A
= 2.0
Gate Resistance
= 25
= 125
= 300V, V
= 300V, V
Collector Current
0
C
0
Ω
0
C
C
0
C
1
Cies
Coes
Cres
Collector - Emitter Voltage, V
GE
60
GE
= +/- 15V
= +/- 15V
Collector Current, I
Gate Resistance, R
80
100
10
C
g
[A]
[
Ω
]
Common Emitter
V
T
120
GE
C
10
CE
= 25
= 0V, f = 1MHz
[V]
Ton
Tr
Toff
140
Tf
30
1000
100
10
Fig 8. Turn-On Characteristics vs.
10000
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
100
1
Common Emitter
V
I
T
T
C
CC
C
C
= 150A
1
= 25
= 125
= 300V, V
Common Emitter
V
R
T
T
Common Emitter
V
I
T
T
CC
C
C
G
C
40
C
C
0
CC
= 25
= 125
Collector Current
= 2.0
C
= 150A
0
= 25
= 125
= 300V, V
C
= 300V, V
0
C
Ω
0
0
GE
C
C
0
C
= +/- 15V
Gate Resistance, R
GE
60
GE
= +/- 15V
= +/- 15V
Collector Current, I
Gate Resistance, R
80
10
100
G
10
[
Ω
G
C
]
[
[A]
Ω
]
120
Ton
Tr
FMG2G150US60E Rev. A
Toff
Toff
Tf
Tf
Eoff
140
Eon