FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 3

• Manufacturer Part Number: FMG2G150US60E
• Description: IGBT MOLDING 600V 150A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G150US60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.84nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of DIODE
Thermal Characteristics
V
t
I
Q
R
R
R
Weight
rr
rr
Symbol
FM
θJC
θJC
θCS
rr
Symbol
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Case-to-Sink
Weight of Module
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Parameter
(Conductive grease applied)
Parameter
I
di / dt = 300 A/us
I
F
F
= 150A
= 150A
T
C
= 25°C unless otherwise noted
Test Conditions
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Typ.
0.03
--
--
--
Min.
--
--
--
--
--
--
--
--
Max.
0.20
0.47
270
1430
Typ.
--
130
675
1.9
1.8
90
15
22
Max.
1270
130
2.8
20
--
--
--
--
FMG2G150US60E Rev. A
Units
°C/W
°C/W
°C/W
g
Units
nC
ns
V
A