FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMG2G150US60E
Manufacturer Part Number
FMG2G150US60E
Description
IGBT MOLDING 600V 150A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG2G150US60E.pdf
(9 pages)
Specifications of FMG2G150US60E
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
12.84nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G150US60E
Manufacturer:
FAIRCHILD
Quantity:
292
Part Number:
FMG2G150US60E
Quantity:
55
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of DIODE
Thermal Characteristics
V
t
I
Q
R
R
R
Weight
rr
rr
Symbol
FM
θJC
θJC
θCS
rr
Symbol
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Case-to-Sink
Weight of Module
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Parameter
(Conductive grease applied)
Parameter
I
di / dt = 300 A/us
I
F
F
= 150A
= 150A
T
C
= 25°C unless otherwise noted
Test Conditions
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Typ.
0.03
--
--
--
Min.
--
--
--
--
--
--
--
--
Max.
0.20
0.47
270
1430
Typ.
--
130
675
1.9
1.8
90
15
22
Max.
1270
130
2.8
20
--
--
--
--
FMG2G150US60E Rev. A
Units
°C/W
°C/W
°C/W
g
Units
nC
ns
V
A