LRI64-SBN18/1GE STMicroelectronics, LRI64-SBN18/1GE Datasheet - Page 41

• Manufacturer Part Number: LRI64-SBN18/1GE
• Description: IC EEPROM MEMORY TAG WAFER
• Manufacturer: STMicroelectronics
• Series: LRI64r

Specifications of LRI64-SBN18/1GE

• Rf Type: Write Once Read Many (WORM)
• Frequency: 13.56MHz
• Features: ISO15693, ISO18000-3
• Package / Case: Wafer
• For Use With: 497-5538 - DEMO KIT LONG-RANGE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

LRI64
Table 14.
1. T
2. All timing measurements were performed on a reference antenna with the following characteristics:
MI
t
RFR
Symbol
t
t
CARRIER
External size: 75 mm x 48 mm
Number of turns: 6
Width of conductor: 1 mm
Space between 2 conductors: 0.4 mm
Value of the tuning capacitor: 28.5 pF (LRI64-W4)
Value of the coil: 4.3 µH
Tuning Frequency: 14.4 MHz.
RFSBL
MINCD
t
f
A
t
f
JIT
SH
t
t
, t
W
C
1
2
= –20 to 85 °C
RFF
External RF signal frequency
10% carrier modulation index
10% rise and fall time
10% minimum pulse width for
bit
Bit pulse jitter
Minimum time from carrier
generation to first data
Subcarrier frequency high
Time for LRI64 response
Time between commands
Programming time
AC characteristics
Parameter
conditions
From H-field min
MI=(A-B)/(A+B)
93297/f
4352/f
4224/f
f
Test
C
/32
C
C
(1),(2)
C
13.553
Min.
313
309
7.1
10
–2
0
DC and AC parameters
423.75
13.56
320.9
311.5
Typ.
0.1
13.567
Max.
9.44
6.88
322
314
3.0
30
+2
1
MHz
Unit
kHz
41/49
ms
ms
µs
µs
µs
µs
µs
%