LRI64-SBN18/1GE STMicroelectronics, LRI64-SBN18/1GE Datasheet - Page 40

• Manufacturer Part Number: LRI64-SBN18/1GE
• Description: IC EEPROM MEMORY TAG WAFER
• Manufacturer: STMicroelectronics
• Series: LRI64r

Specifications of LRI64-SBN18/1GE

• Rf Type: Write Once Read Many (WORM)
• Frequency: 13.56MHz
• Features: ISO15693, ISO18000-3
• Package / Case: Wafer
• For Use With: 497-5538 - DEMO KIT LONG-RANGE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 12.
Figure 38. LRI64 synchronous timing, transmit and receive
Figure 38
for the AC/DC parameters are:
●
●
Table 13.
1. T
Symbol
C
V
V
Symbol
I
RET
CC
TUN
CC
A
Close coupling condition with tester antenna (1mm)
Gives LRI64 performance on tag antenna
T
= –20 to 85 °C
A
Regulated voltage
Retromodulated induced voltage
Supply current
Internal tuning capacitor
shows an ASK modulated signal, from the VCD to the LRI64. The test condition
Operating conditions
DC characteristics
Ambient operating temperature
t MIN CD
Parameter
A
Parameter
t RFSBL
B
Read
Write
t RFF
f=13.56 MHz for W4/1
f=13.56 MHz for W4/2
f=13.56 MHz for W4/3
Test conditions
ISO10373-7
V
V
CC
CC
= 3.0 V
= 3.0 V
t RFR
Min.
–20
(1)
f CC
Min.
1.5
10
Max.
85
Typ.
28.5
21
97
AI06680B
Max.
150
3.0
50
Unit
°C
LRI64
Unit
mV
µA
µA
pF
pF
pF
V