LRI64-SBN18/1GE STMicroelectronics, LRI64-SBN18/1GE Datasheet - Page 10

• Manufacturer Part Number: LRI64-SBN18/1GE
• Description: IC EEPROM MEMORY TAG WAFER
• Manufacturer: STMicroelectronics
• Series: LRI64r

Specifications of LRI64-SBN18/1GE

• Rf Type: Write Once Read Many (WORM)
• Frequency: 13.56MHz
• Features: ISO15693, ISO18000-3
• Package / Case: Wafer
• For Use With: 497-5538 - DEMO KIT LONG-RANGE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power transfer
4
4.1
4.2
10/49
Power transfer
Power transfer to the LRI64 is accomplished by inductive coupling of the 13.56 MHz radio
signal between the antennas of the LRI64 and VCD. The RF field transmitted by the VCD
induces an AC voltage on the LRI64 antenna, which is then rectified, smoothed and voltage-
regulated. Any amplitude modulation present on the signal is demodulated by the amplitude
shift keying (ASK) demodulator.
Frequency
ISO 15693 and ISO 18000-3 Mode 1 standards define the carrier frequency (f
operating field to be 13.56 MHz±7kHz.
Operating field
The LRI64 operates continuously between H
●
●
A VCD generates a field of at least H
The minimum operating field is H
The maximum operating field is H
min
min
max
and not exceeding H
and has a value of 150mA/m (rms).
and has a value of 5A/m (rms).
min
and H
max
.
max
in the operating volume.
C
) of the
LRI64