LRI64-SBN18/1GE STMicroelectronics, LRI64-SBN18/1GE Datasheet - Page 39

• Manufacturer Part Number: LRI64-SBN18/1GE
• Description: IC EEPROM MEMORY TAG WAFER
• Manufacturer: STMicroelectronics
• Series: LRI64r

Specifications of LRI64-SBN18/1GE

• Rf Type: Write Once Read Many (WORM)
• Frequency: 13.56MHz
• Features: ISO15693, ISO18000-3
• Package / Case: Wafer
• For Use With: 497-5538 - DEMO KIT LONG-RANGE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

LRI64
19
Maximum rating
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 11.
1. Mil. Std. 883 - Method 3015
2. Human body model.
3. Machine model.
Symbol
V
V
T
t
I
STG
STG
MAX
CC
ESD
Absolute maximum ratings
Storage temperature
Storage time
Supply current on AC0 / AC1
Input voltage on AC0 / AC1
Electrostatic discharge
voltage
(1)
Parameter
UFDFPN8
(kept in its antistatic bag)
Wafer
(kept in its antistatic bag)
Wafer
UFDFPN8 (HBM)
UFDFPN8 (MM)
(3)
(2)
–1000
–100
Min.
–65
–20
15
–7
Maximum rating
Max.
1000
150
100
25
23
20
7
months
Unit
mA
°C
V
V
V
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