SI1015-A-GM Silicon Laboratories Inc, SI1015-A-GM Datasheet - Page 48

• Manufacturer Part Number: SI1015-A-GM
• Description: IC TXRX MCU + EZRADIOPRO
• Manufacturer: Silicon Laboratories Inc

Specifications of SI1015-A-GM

• Package / Case: 42-QFN
• Frequency: 240MHz ~ 960MHz
• Data Rate - Maximum: 256kbps
• Modulation Or Protocol: FSK, GFSK, OOK
• Applications: General Purpose
• Power - Output: 13dBm
• Sensitivity: -121dBm
• Voltage - Supply: 0.9 V ~ 3.6 V
• Current - Receiving: 18.5mA
• Current - Transmitting: 30mA
• Data Interface: PCB, Surface Mount
• Memory Size: 8kB Flash, 768B RAM
• Antenna Connector: PCB, Surface Mount
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 240 MHz to 960 MHz
• Interface Type: UART, SMBus, SPI, PCA
• Output Power: 13 dBm
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Supply Current: 4 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK, GFSK, OOK
• Protocol Supported: C2, SMBus
• Core: 8051
• Program Memory Type: Flash
• Program Memory Size: 8 KB
• Data Ram Size: 768 B
• Supply Current (max): 4 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1868-5

Si1010/1/2/3/4/5
Table 4.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table. All supply current specs are for
the EZRadioPRO peripheral placed in shutdown mode.
48
Notes:
1. Based on device characterization data; Not production tested.
2. SYSCLK must be at least 32 kHz to enable debugging.
3. Digital Supply Current depends upon the particular code being executed. The values in this table are obtained
4. Includes oscillator and regulator supply current.
5. IDD can be estimated for frequencies <14 MHz by simply multiplying the frequency of interest by the
6. The supply current specifications in Table 4.2 are for two cell mode. The VBAT current in one-cell mode can
7. Idle IDD can be estimated by taking the current at 25 MHz minus the difference in current indicated by the
with the CPU executing an “sjmp $” loop, which is the compiled form of a while(1) loop in C. One iteration
requires 3 CPU clock cycles, and the Flash memory is read on each cycle. The supply current will vary slightly
based on the physical location of the sjmp instruction and the number of Flash address lines that toggle as a
result. In the worst case, current can increase by up to 30% if the sjmp loop straddles a 64-byte Flash address
boundary (e.g., 0x007F to 0x0080). Real-world code with larger loops and longer linear sequences will have
few transitions across the 64-byte address boundaries.
frequency sensitivity number for that range, then adding an offset of 90 µA. When using these numbers to
estimate I
indicated by the frequency sensitivity number. For example: V
be estimated using the following equation:
The VBAT Voltage is the voltage at the VBAT pin, typically 0.9 to 1.8 V.
The Supply Current (two-cell mode) is the data sheet specification for supply current.
The Supply Voltage is the voltage at the VDD/DC+ pin, typically 1.8 to 3.3 V (default = 1.9 V).
The DC-DC Converter Efficiency can be estimated using Figure 4.3–Figure 4.5.
frequency sensitivity number. For example: V
(25 MHz – 20 MHz) x 0.102 mA/MHz = 3.5 mA assuming the same oscillator setting.
5 MHz) x 0.079 mA/MHz = 0.52 mA.
Parameter
VBAT Current (one-cell mode)
DD
for >14 MHz, the estimate should be the current at 25 MHz minus the difference in current
=
Conditions
---------------------------------------------------------------------------------------------------------------------------------- -
Supply Voltage Supply Current (two-cell mode)
DD
DC-DC Converter Efficiency VBAT Voltage
Rev. 1.0
= 3.0 V; F = 5 MHz, Idle I

DD
= 3.0 V; F = 20 MHz, I
DD

Min
= 2.1 mA – (25 MHz –
Typ
DD
= 4 mA –
Max
Units