DF3048BVX25WV Renesas Electronics America, DF3048BVX25WV Datasheet - Page 700
![MCU 3/5V 128K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3048BVX25WV
Manufacturer Part Number
DF3048BVX25WV
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3048BVX25WV
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3048BVX25WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 700 of 903
- Download datasheet (5Mb)
Section 21 Electrical Characteristics
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 3.00 Sep 27, 2006 page 672 of 872
REJ09B0325-0300
2. Programming time per 128 bytes. (Shows the total time the P bit in the flash memory
3. Block erase time. (Shows the total time the E bit in FLMCR1 is set. It does not include
4. To specify the maximum programming time value (t
5. For the maximum erase time (t
The wait time after P bit setting should be changed as follows according to the value of
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
t
To set the maximum erase time, the values of t
Examples:
control register (FLMCR1) is set. It does not include the programming verification time.)
the erase verification time.)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
the programming counter (n).
wait time after E bit setting (t
the above formula.
E
(max) = Wait time after E bit setting (t
When t
When t
se
se
= 100 [ms], N = 12
= 10 [ms], N = 120
se
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
se
) x maximum erase count (N)
se
and N should be set so as to satisfy
P
(max)) in the 128-byte
t
t
sp30
sp200
sp10
= 30 µs
= 10 µs
= 200 µs
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