M30800SAGP#U5 Renesas Electronics America, M30800SAGP#U5 Datasheet - Page 324

• Manufacturer Part Number: M30800SAGP#U5
• Description: IC M32C/80 MCU ROMLESS 100LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30800SAGP#U5

• Core Processor: M16C/80
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 45
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-LQFP
• For Use With: R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

R
R
M
e
E
3
. v
J
Figure 23.6 V
2
0
1
C
9
0 .
B
8 /
Memory Expansion Mode and Microprocessor Mode
(when accessing an external memory space)
BCLK
CSi
ADi
BHE
RD
DB
BCLK
CSi
WR,WRL,
WRH
DBi
0
ADi
BHE
0
[Read Timing]
[Write Timing]
0
2
7
N
G
1
o
NOTE:
0 -
o r
NOTES:
. v
1
3. Varies with operation frequency.
u
1. Values guaranteed only when the microcomputer is used independently.
2. Varies with operation frequency.
0
0
p
t
(if external bus cycle is a + b , m=b)
t
t
t
t
(if external bus cycle is a + b , n=(bx2)-1)
, 1
0
d(DB-WR)
h(WR-DB)
h(WR-AD)
h(WR-CS)
w(WR)
A maximum of 35ns is guaranteed for t
t
t
t
ac1(RD-DB)
ac1(AD-DB)
d(BCLK-AD)
2
CC1
0
=(tcyc/2 x n-15)ns.min
0
5
=V
t
t
t
18ns.max
18ns.max
=(tcyc x m-20)ns.min
=(tcyc/2-20)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
18ns.max
t
d(BCLK-CS)
18ns.max
d(BCLK-AD)
18ns.max
d(BCLK-CS)
d(BCLK-RD)
Page 303
(1 + 1 Bus Cycles)
(1 + 1 Bus Cycles)
CC2
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2) + 1)
=(tcyc x n-35)ns.max (if external bus cycle is a + b , n = a + b)
tcyc
tcyc
=3.3V Timing Diagram (1)
(1)
(1)
t
d(BCLK-WR)
18ns.max
f o
Hi-Z
3
t
t
ac1(AD-DB)
d(DB-WR)
3
0
t
ac1(RD-DB)
t
(3)
w(WR)
(2)
t
su(DB-BCLK)
d(BCLK-AD)
30ns.min
(2)
(3)
Measurement Conditions
tcyc=
(1)
t
t
h(WR-DB)
+t
t
t
h(BCLK-WR)
h(WR-CS)
h(WR-AD)
0ns.min
• V
• Input high and low voltage: V
• Output high and low voltage: V
su(DB-BCLK)
CC
f
(BCLK)
1
10
=V
(3)
9
(3)
(3)
CC
t
h(BCLK-AD)
.
2
t
=3.0 to 3.6V
t
h(BCLK-RD)
t
t
h(BCLK-CS)
-3ns.min
h(BCLK-CS)
0ns.min
0ns.min
h(BCLK-AD)
0ns.min
0ns.min
t
t
t
0ns.min
h(RD-AD)
h(RD-DB)
h(RD-CS)
0ns.min
0ns.min
IH
Vcc
=1.5V, V
OH
23. Electrical Characteristics
=1.5V, V
1
=Vcc
IL
=0.5V
OL
2
=1.5V
=3.3V