DF2210CUNP24V Renesas Electronics America, DF2210CUNP24V Datasheet - Page 637

MCU 16BIT FLASH 3V 32K 64-QFN

DF2210CUNP24V

Manufacturer Part Number
DF2210CUNP24V
Description
MCU 16BIT FLASH 3V 32K 64-QFN
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of DF2210CUNP24V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
24MHz
Connectivity
SCI, SmartCard, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
37
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 6x10b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2210CUNP24V
Manufacturer:
Renesas Electronics America
Quantity:
135
17.8.2
When erasing flash memory, the erase/erase-verify flowchart shown in Figure 17.14 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
3. The time during which the E1 bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 1 bit
6. If the read data is unerased, set erase mode again, and repeat the erase/erase-verify sequence as
register 1, 2 (EBR1, EBR2). To erase multiple blocks, each block must be erased in turn.
An overflow cycle of approximately (y+z+α+β) ms is allowed.
is B'0. Verify data can be read in longwords from the address to which a dummy write was
performed.
before. The maximum number of repetitions of the erase/erase-verify sequence is N.
Erase/Erase-Verify
Rev.7.00 Dec. 24, 2008 Page 581 of 698
REJ09B0074-0700

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