MC9S08DZ60ACLF Freescale Semiconductor, MC9S08DZ60ACLF Datasheet - Page 68

• Manufacturer Part Number: MC9S08DZ60ACLF
• Description: IC MCU 60K FLASH 4K RAM 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08DZ60ACLF

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: CAN, I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: S08DZ
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 4 KB
• Interface Type: CAN, I2C, SCI, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08DZ60
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 24 Channel
• For Use With: DEMO9S08DZ60 - BOARD DEMOEVB9S08DZ60 - BOARD EVAL FOR 9S08DZ60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 4 Memory
Table 4-12
of FCLK (f
of cycles of FCLK and as an absolute time for the case where t
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
4.6.3
The FCDIV register must be initialized after any reset and any error flag is cleared before beginning
command execution. The command execution steps are:
68
1. Write a data value to an address in the FLASH or EEPROM array. The address and data
2. Write the command code for the desired command to FCMD. The six valid commands are blank
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
information from this write is latched into the FLASH and EEPROM interface. This write is a
required first step in any command sequence. For erase and blank check commands, the value of
the data is not important. For sector erase commands, the address can be any address in the sector
of FLASH or EEPROM to be erased. For mass erase and blank check commands, the address can
be any address in the FLASH or EEPROM memory. FLASH and EEPROM erase independently
of each other.
check (0x05), byte program (0x20), burst program (0x25), sector erase (0x40), mass erase (0x41),
and sector erase abort (0x47). The command code is latched into the command buffer.
address and data information).
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the
write to the memory array and before writing the 1 that clears FCBEF and launches the complete
command. Aborting a command in this way sets the FACCERR access error flag which must be
cleared before starting a new command.
shows program and erase times. The bus clock frequency and FCDIV determine the frequency
FCLK
Program and Erase Command Execution
1
Before programming a particular byte in the FLASH or EEPROM, the
sector in which that particular byte resides must be erased by a mass or
sector erase operation. Reprogramming bits in an already programmed byte
without first performing an erase operation may disturb data stored in the
FLASH or EEPROM memory.
Excluding start/end overhead
). The time for one cycle of FCLK is t
Sector erase abort
Burst program
Byte program
Sector erase
Mass erase
Parameter
Table 4-12. Program and Erase Times
MC9S08DZ128 Series Data Sheet, Rev. 1
Cycles of FCLK
NOTE
20,000
4000
9
4
4
FCLK
= 1/f
FCLK
FCLK
Time if FCLK = 200 kHz
= 5 μs. Program and erase times
. The times are shown as a number
100 ms
20 μs
20 μs
20 ms
45 μs
1
1
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