MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 28

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 12: READ to WRITE
Figure 13: READ to WRITE with Extra Clock Cycle
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Note:
Note:
CL = 3. The READ command may be to any bank, and the WRITE command may be to any
bank. If a burst of one is used, then DQM is not required.
CL = 3. The READ command may be to any bank, and the WRITE command may be to any
bank.
COMMAND
ADDRESS
COMMAND
DQM
ADDRESS
CLK
DQ
DQM
CLK
DQ
BANK,
COL n
T0
READ
T0
BANK,
COL n
28
READ
T1
NOP
T1
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2
NOP
T2
NOP
T3
NOP
256Mb: x32 Mobile SDRAM
t HZ
D
OUT
T3
NOP
D
n
t HZ
OUT
t CK
n
T4
NOP
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
T4
BANK,
COL b
WRITE
DON’T CARE
D
IN
b
T5
t
BANK,
COL b
WRITE
DS
D
IN
b
t
DS
Operation