MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 20

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DEEP POWER-DOWN
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
DEEP POWER-DOWN is an operating mode to achieve maximum power reduction by
eliminating the power of the whole memory array of the devices. Array data will not be
retained once the device enters deep power-down mode. The settings in the mode and
extended mode register will be retained during deep power-down.
This mode is entered by having all banks idle then CS# and WE# held LOW with RAS#
and CAS# held HIGH at the rising edge of the clock, while CKE is LOW. This mode is
exited by asserting CKE HIGH.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x32 Mobile SDRAM
©2003 Micron Technology, Inc. All rights reserved.
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