MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 25

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 10: Consecutive READ Bursts
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Note:
COMMAND
COMMAND
COMMAND
Each READ command may be to either bank. DQM is LOW.
ADDRESS
ADDRESS
ADDRESS
CLK
CLK
CLK
DQ
DQ
DQ
T0
BANK,
T0
T0
COL n
BANK,
BANK,
COL n
COL n
READ
READ
READ
CL = 1
CL = 2
T1
T1
T1
NOP
NOP
NOP
D
OUT
n
CL = 3
25
T2
T2
T2
NOP
NOP
NOP
D
D
n + 1
OUT
OUT
n
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T3
T3
T3
NOP
NOP
NOP
D
n + 2
D
D
n + 1
OUT
OUT
OUT
n
T4
T4
T4
BANK,
READ
BANK,
READ
BANK,
READ
COL b
COL b
COL b
256Mb: x32 Mobile SDRAM
X = 0 cycles
X = 1 cycle
D
n + 2
D
n + 3
D
n + 1
OUT
OUT
OUT
X = 2 cycles
T5
T5
T5
NOP
NOP
NOP
D
n + 2
D
n + 3
D
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OUT
OUT
OUT
b
T6
T6
NOP
NOP
D
n + 3
D
OUT
OUT
b
DON’T CARE
Operation
T7
NOP
D
OUT
b