MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 23

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 8: READ Command
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Upon completion of a burst, assuming no other commands have been initiated, the DQs
will go High-Z. A full-page burst will continue until terminated. (At the end of the page, it
will wrap to column 0 and continue.)
Data from any READ burst may be truncated with a subsequent READ command, and
data from a fixed-length READ burst may be immediately followed by data from a READ
command. In either case, a continuous flow of data can be maintained. The first data
element from the new burst follows either the last element of a completed burst or the
last desired data element of a longer burst that is being truncated. The new READ com-
mand should be issued x cycles before the clock edge at which the last desired data ele-
ment is valid, where x equals the CAS latency minus one.
BA0,BA1
A9, A11
A0–A8
CAS#
RAS#
WE#
A10
CKE
CLK
CS#
23
HIGH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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COLUMN
ADDRESS
ADDRESS
BANK
256Mb: x32 Mobile SDRAM
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©2003 Micron Technology, Inc. All rights reserved.
Operation