K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 39

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
Setup Slew Rate
V
V
V
V
V
V
Falling Signal
DDQ
IH
IH
REF
IL
IL
Figure 14 - IIIustration of tangent line for tIS
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
CK
CK
V
nominal
SS
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tIS
tangent
REF
line
(DC) - V
Setup Slew Rate
Rising Signal
39 of 47
tIH
IL
(AC)max]
nominal
line
=
∆TR
tangent line[V
tIS
tangent
line
∆TR
IH
(AC)min - V
tIH
V
REF
region
to ac
Rev. 1.4 December 2008
REF
(DC)]
DDR2 SDRAM