K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 34

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
V
V
V
V
V
V
IL
IL
REF
DDQ
IH
IH
Hold Slew Rate tangent line [ V
Rising Signal
(DC)max
(AC)max
(AC)min
(DC)min
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
(DC)
DQS
DQS
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF
line
(DC) - V
Hold Slew Rate
Falling Signal
34 of 47
tDH
IL
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tDS
tangent
∆TF
line
IH
tDH
(DC)min - V
∆TF
nominal
line
Rev. 1.4 December 2008
REF
(DC) ]
DDR2 SDRAM