K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 23

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-read command
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width (HIGH and LOW pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asynchronously
drops LOW
Parameter
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
tOIT
tDelay
tCKE
Symbol
23 of 47
tIS+tCK+tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
WR+tRP
tAC(min)
tAC(min)
6 - AL
37.5
min
200
7.5
7.5
2.5
50
15
2
2
3
2
3
8
0
2
DDR2-533
tAC(max)+1
tAC(max)+1
tAC(max)+1
tAC(max)
2.5tCK+
2tCK+
+ 0.6
max
2.5
12
2
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
tIS+tCK+tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
WR+tRP
tAC(min)
tAC(min)
6 - AL
37.5
min
200
7.5
2.5
50
15
10
2
2
3
2
3
8
0
2
DDR2-400
Rev. 1.4 December 2008
tAC(max)+1
tAC(max)+1
tAC(max)+1
tAC(max)
2.5tCK+
2tCK+
+ 0.6
max
2.5
12
x
x
x
x
x
x
x
x
x
x
x
x
x
2
x
x
x
DDR2 SDRAM
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
17,44
17,44
1,2
14
24
27
16
16
32
15
3
1