K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 17

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K4T51043QG

Manufacturer Part Number
K4T51043QG
Description
512Mb G-die DDR2 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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K4T51043QG
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Note :
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS
5. Definitions for IDD
For purposes of IDD testing, the following parameters are utilized
Detailed IDD7
The detailed timings are shown below for IDD7.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and tFAW(IDD) using a burst length of 4. Control and address bus
inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices x4/ x8/ x16
-DDR2-400 3/3/3
A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D
-DDR2-533 4/4/4
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-DDR2-667 5/5/5
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
-DDR2-667 4/4/4
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
-DDR2-800 6/6/6
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
-DDR2-800 5/5/5
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
tRRD(IDD)-x4/x8
tRRD(IDD)-x16
tRASmin(IDD)
bits 10 and 11.
Parameter
tRCD(IDD)
tRFC(IDD)
tRC(IDD)
tCK(IDD)
tRP(IDD)
LOW is defined as V
HIGH is defined as V
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at V
SWITCHING is defined as:
CL(IDD)
signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control
masks or strobes.
DDR2-800
IN
IN
5-5-5
≤ V
12.5
57.5
12.5
≥ V
105
7.5
2.5
10
45
5
IL
IH
AC(max)
AC(min)
REF
= V
DDQ
DDR2-800
6-6-6
105
/2
7.5
2.5
15
60
10
45
15
6
17 of 47
DDR2-667
5-5-5
105
7.5
15
60
10
45
15
5
3
DDR2-533
4-4-4
3.75
105
7.5
15
60
10
45
15
4
Rev. 1.4 December 2008
DDR2-400
DDR2 SDRAM
3-3-3
105
7.5
15
55
10
40
15
3
5
Units
tCK
ns
ns
ns
ns
ns
ns
ns
ns

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