K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 33

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
DQS
Note1
V
V
V
V
Note : DQS signal must be monotonic between V
V
V
IL
IL
REF
DDQ
IH
IH
(DC)max
(AC)max
Hold Slew Rate
(AC)min
(DC)min
Rising Signal
Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
IL
IL
SS
REF
V
(DC)max
(AC)max
(AC)min
(DC)min
SS
(DC)
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
∆TR
slew rate
nominal
tDS
IL
(DC)max
tDH
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IL
∆TR
(DC)max and V
Hold Slew Rate
Falling Signal
tDS
nominal
slew rate
IH
=
(DC)min.
V
IH
(DC)min - V
tDH
∆TF
∆TF
Rev. 1.4 December 2008
REF
(DC)
DDR2 SDRAM