K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 30

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC)max
(AC)max
Figure 7 - IIIustration of tangent line for tDS (differential DQS, DQS)
(AC)min
(DC)min
(DC)
DQS
DQS
V
nominal
SS
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF
line
(DC) - V
Setup Slew Rate
tDH
Rising Signal
30 of 47
IL
(AC)max]
nominal
line
=
tangent line[V
∆TR
tDS
tangent
line
∆TR
IH
tDH
(AC)min - V
V
REF
region
to ac
Rev. 1.4 December 2008
REF
(DC)]
DDR2 SDRAM