K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 19

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
12.0 Input/Output capacitance
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
(0 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRP
tRC
OPER
Parameter
< 95 °C; V
Parameter
DDR2-800(E7)
3.75
12.5
12.5
57.5
min
2.5
45
5
-
DDQ
5-5-5
= 1.8V + 0.1V; V
70000
max
8
8
8
-
-
-
-
tRFC
tREFI
3.75
DDR2-800(F7)
min
2.5
15
15
60
45
3
-
0 °C ≤ T
85 °C < T
DD
6-6-6
= 1.8V + 0.1V)
Symbol
70000
max
Symbol
CDCK
CDIO
8
8
8
CCK
-
-
-
-
CASE
CIO
CDI
CI
CASE
19 of 47
≤ 85°C
≤ 95°C
DDR2-667(E6)
3.75
min
15
15
60
45
5
3
-
5 - 5 - 5
Min
1.0
1.0
2.5
x
x
x
DDR2-400
DDR2-533
70000
max
256Mb
8
8
8
-
-
-
-
7.8
3.9
75
Max
0.25
0.25
2.0
2.0
4.0
0.5
3.75
3.75
DDR2-533(D5)
min
15
15
60
45
512Mb
5
-
105
7.8
3.9
4 - 4 - 4
Min
1.0
1.0
2.5
x
x
x
DDR2-667
70000
max
8
8
8
-
-
-
-
127.5
1Gb
Max
0.25
0.25
7.8
3.9
2.0
2.0
3.5
0.5
Rev. 1.4 December 2008
DDR2-400(CC)
min
15
15
55
40
5
5
DDR2 SDRAM
-
-
2Gb
195
3 - 3 - 3
Min
7.8
3.9
1.0
1.0
2.5
x
x
x
DDR2-800
70000
max
8
8
-
-
-
-
-
327.5
4Gb
Max
0.25
1.75
0.25
7.8
3.9
2.0
3.5
0.5
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
pF
pF
pF
pF
pF
pF
ns
µs
µs