s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 96

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

8 Mb pSRAM (supplier 2)
8 Megabit (512 K x 16 bit) Ultra-low Power
Asynchronous CMOS Pseudo SRAM
Features
General Description
February 25, 2004 S71JLxxxHxx_00A1
The S71JL064H80—10/11/12 contains an integrated memory device containing
a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as
512,288 words by 16 bits. It is designed to be identical in operation and interface
to standard 6T SRAMS. The device is designed for low standby and operating cur-
rent and includes a power-down feature to automatically enter standby mode.
The device operates with two chip enable (CE1# and CE2) controls and output
enable (OE#) to allow for easy memory expansion. Byte controls (UB# and LB#)
allow the upper and lower bytes to be accessed independently and can also be
used to deselect the device. The S71JL064H80 is optimal for various applications
where low-power is critical such as battery backup and hand-held devices. The
device can operate over a very wide temperature range of -40°C to +85°C and
is available in tested wafer format.
Single Wide Power Supply Range
— 2.7 to 3.6 Volts
Very low standby current
— 65µA at 3.0V (Max)
Simple memory control
— Dual Chip Enables (CE1# and CE2)
— Byte control for independent byte operation
— Output Enable (OE#) for memory expansion
Very fast output enable access time
— 35ns OE# access time
Automatic power down to standby mode
TTL compatible three-state output driver
Operating Temperature
— -40°C to +85°C
Power Supply
— 2.3V - 3.6V
Speed
— 70ns @ 2.7V
P r e l i m i n a r y
8 Mb pSRAM (supplier 2)
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