s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 16

• Manufacturer Part Number: s71ws512ne0bfwzz
• Description: Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
• Manufacturer: Meet Spansion Inc.

General Description
16
The WSxxxN is a 256 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode
Flash memory device, organized as 16 Mwords of 16 bits. This device uses a sin-
gle V
volt V
vice can be programmed in standard EPROM programmers.
At 66 MHz and 1.8V V
with am initial latency of 69 ns at 30 pF. At 54 MHz and 1.8V V
vides a burst access of 13.5 ns at 30 pF with an initial latency of 69 ns at 30 pF.
The device operates within the industrial temperature range of -40°C to +85°C
or wireless temperature range of -25°C to +80°C. These devices are offered in
MCP compatible FBGA packages. See the product selector guide for details
The Simultaneous Read/Write architecture provides simultaneous operation
by dividing the memory space into sixteen banks. The device can improve over-
all system performance by allowing a host system to program or erase in one
bank, then immediately and simultaneously read from another bank, with zero
latency. This releases the system from waiting for the completion of program or
erase operations.
The device is divided as shown in the following table:
The VersatileIO™ (V
that the device generates at its data outputs and the voltages tolerated at its
data inputs to the same voltage level that is asserted on the V
The device uses Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#)
and Output Enable (OE#) to control asynchronous read and write operations.
For burst operations, the device additionally requires Ready (RDY), and Clock
(CLK). This implementation allows easy interface with minimal glue logic to a
CC
HH
of 1.65 to 1.95 V to read, program, and erase the memory array. A 9.0-
on ACC may be used for faster program performance if desired. The de-
Bank
10
11
12
13
14
15
0
1
2
3
4
5
6
7
8
9
S29WSxxxN MirrorBit™ Flash Family For Multi-chip Products (MCP) S71WS512NE0BFWZZ_00_ A1 June 28, 2004
IO
IO
) control allows the host system to set the voltage levels
, the device provides a burst access of 11.2 ns at 30 pF
A d v a n c e
Quantity of Sectors
(WS256N)
15/7/3
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
16/8/4
15/7/3
4/4/4
4/4/4
I n f o r m a t i o n
IO
IO
, the device pro-
pin.
16 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
64 Kwords
16 Kwords
Sector Size