s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 111

• Manufacturer Part Number: s71ws512ne0bfwzz
• Description: Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
• Manufacturer: Meet Spansion Inc.

AC CHARACTERISTICS (Continued)
Notes
June 28, 2004 S71WS512NE0BFWZZ_00_A1
ASYNCHRONOUS WRITE OPERATION
Write Cycle Time
Address Setup Time
ADV# Low Pulse Width
Address Hold Time from ADV# High
CE#1 Write Pulse Width
WE# Write Pulse Width
LB#, UB# Write Pulse Width
CE#1 Write Recovery Time
WE# Write Recovery Time
LB#, UB# Write Recovery Time
Data Setup Time
Data Hold Time
OE# High to CE#1 Low Setup Time for Write
OE# High to Address Setup Time
for Write
LB#, UB# Write Pulse Overlap
CE#1 High Pulse Width
*1: Maximum value is applicable if CE#1 is kept at Low without any address change. If the relaxation is needed
*2: Minimum value must be equal or greater than the sum of write pulse (t
*3: Write pulse is defined from High to Low transition of CE#1, WE# or LB# / UB#, whichever occurs last.
*4: t
*5: Write recovery is defined from Low to High transition of CE#1, WE# or LB# / UB#, whichever occurs first.
*6: If OE# is Low after minimum t
*7: If OE# is Low after new address input, read cycle is initiated. In other word, OE# must be brought to High
by system operation, please contact local FUJITSU representative for the relaxation of 1ms limitation.
time (t
within 5ns after CE#1 is brought to Low. Once read cycle is initiated, new write pulse should be input after
minimum t
at the same time or before new address valid. Once read cycle is initiated, new write pulse should be input
after minimum t
VPL
is specified from the negative edge of either CE#1 or ADV# whichever comes late.
WRC
Parameter
, t
RC
WR
is met.
or t
RC
is met and data bus is in High-Z.
BR
).
P r e l i m i n a r y
OHCL
, read cycle is initiated. In other word, OE# must be brought to High
128Mb pSRAM
Symbol
t
t
t
t
t
t
t
t
t
t
OHCL
t
t
t
WRC
t
t
BWO
t
AHV
OES
VPL
WC
CW
BW
WR
WP
DH
AS
BR
DS
CP
Min.
70
10
45
45
45
15
15
15
15
–5
30
15
0
5
0
0
Value
Max.
1000
1000
1000
CW
—
—
—
—
—
—
—
—
—
—
—
—
—
, t
WP
or t
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
BW
) and write recovery
*1, *2
Notes
*3
*4
*3
*3
*3
*5
*5
*5
*6
*7
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