SL1ICS3001W/N4D NXP Semiconductors, SL1ICS3001W/N4D Datasheet - Page 12

• Manufacturer Part Number: SL1ICS3001W/N4D
• Description: RF Wireless Misc ICODE 1 FFC
• Manufacturer: NXP Semiconductors
• Type: Sawn Wafer on Foilr

Specifications of SL1ICS3001W/N4D

• Package / Case: Die
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: - 25 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SL1ICS3001W/N4D,00

Philips Semiconductors
12.2
For further information, please refer to the Philips documents: “Dicing process for thin wafers” and “General
specification for 6” wafer” . In case of doubt or inconsistency the mentioned wafer specifications are applicable.
Notes
1. Wafers can be delivered with a thickness of 525 m (untreated) or with 150
2. There are two wafer status: unsawn and sawn on FCC; both tested. Minimum yield per lot is 30%.
2002 May 23
Designation
Wafer diameter
Die separation lane width
Electrical connection of substrate
Geometrically complete dies per wafer
Orientation of dies relatively to wafer flat
Position of test structures
Wafer layout
Batch size
Process
Backside treatment
Wafer status
I-CODE1 Label IC
etched backside.
Wafer specifications
PARAMETER
12
each wafer is laser scribed with batch and wafer number
150
80 m (scribe line)
VSS potential
approximately 7400
see Fig.5
see Fig.5
see Fig.5
24 wafers
6C15 IDFW
note 1
note 2
0.3 mm (150 mm = 6”)
5 m (approximately 6 mil) ground and
VALUE
SL1ICS3001
Product specification