SL1ICS3001W/N4D NXP Semiconductors, SL1ICS3001W/N4D Datasheet - Page 10

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SL1ICS3001W/N4D

Manufacturer Part Number
SL1ICS3001W/N4D
Description
RF Wireless Misc ICODE 1 FFC
Manufacturer
NXP Semiconductors
Type
Sawn Wafer on Foilr
Datasheet

Specifications of SL1ICS3001W/N4D

Package / Case
Die
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
- 25 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SL1ICS3001W/N4D,00
Philips Semiconductors
5. Definition:
6. Bandwidth limitation ( 7 kHz) according to ISM band regulations.
7. The given values are derived from the 13.56 MHz system frequency.
8. Recommended values for pulse duration generated at the read/write device.
12 MECHANICAL CHARACTERISTICS
12.1
Notes
1. The passivation is a protection of active areas against dust (particles), humidity, and general contamination (whole
2. Due to the glass-like physical properties careful handling and processing is required.
2002 May 23
Designation
Bond pad location
Bond pad size: LA and LB
Test pad size: TEST and VSS
Bond pad metallization material
Metallization thickness
Die dimensions (including 80 m scribe line)
Die dimensions (excluding scribe line)
Tolerances for sawn dies
Pad identification
Top side passivation material
Passivation thickness
I-CODE1 Label IC
surface of the chip except for the bond pads).
Die specifications
m
=
----------------------------- -
V
V
max
max
PARAMETER
+
V
V
min
min
10
VCOL1V0; visible on each die (see Fig.3)
see Fig.3
130
90
AlSiCu
1.4 m
1460
1380
see Fig.2
oxynitride; notes 1 and 2
1.6 m
25 m
90 m
150 m
1490 m
1410 m
VALUE
SL1ICS3001
Product specification

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