BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 9

TRANSISTOR RF LDMOS SOT800

BLF872,112

Manufacturer Part Number
BLF872,112
Description
TRANSISTOR RF LDMOS SOT800
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF872,112

Package / Case
SOT800
Transistor Type
LDMOS
Frequency
860MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
2.2µA
Current - Test
900mA
Voltage - Test
32V
Power - Output
300W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2408
934058888112
BLF872
BLF872
Philips Semiconductors
Table 8:
For test circuit, see
[1]
[2]
[3]
[4]
BLF872_1
Product data sheet
Component
C15, C16
C17, C18
C20
C21
C22
C23
C24, C32
C25
C26, C27
C28, C29
C30, C31
L1
L2
L3
L4
L5
L6
L10
L11
L12
L13
R1
R2
R3
R4
R5
R6
American technical ceramics type 180R or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
PCB: Rogers 5880;
List of components
Description
ceramic capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
tekelec trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
electrolytic capacitor
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
resistor
resistor
resistor
resistor
potentiometer
potentiometer
Figure
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m.
10,
11
…continued
and 12.
Rev. 01 — 20 February 2006
Value
15 nF
470 F
13 pF
0.6 pF to 4.5 pF
3.9 pF
10 pF
3.0 pF
30 pF
100 pF
15 nF
10 F
5.6
5.6
100
100
2 k
2 k
[3]
[3]
[3]
[3]
[3]
[3]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Remarks
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
L) 24 mm
L) 10 mm
L) 5 mm
L) 2.4 mm
L) 3.5 mm
L) 2 mm
L) 24 mm
L) 10 mm
L) 3 mm
L) 2 mm
16.5 mm
43.3 mm
31.5 mm
43.3 mm
BLF872
13.1 mm
17.7 mm
10 mm
15 mm
15 mm
43 mm
9 of 16

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