BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 4

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Philips Semiconductors
7. Application information
Table 7:
T
[1]
BLF872_1
Product data sheet
Mode of operation
2-tone, class AB
DVB-T (8K OFDM)
h
= 25 C unless otherwise specified.
Sync. compression: input sync.
RF performance in a common-source 860 MHz narrowband test circuit
f
(MHz)
f
f
858
1
2
Fig 1. Output capacitance C
= 860;
= 860.1
33 %, output sync. 27 %.
V
per section; capacitance value without internal matching
GS
[1]
= 0 V; f = 1 MHz.
V
(V)
32
32
DS
C
Rev. 01 — 20 February 2006
(pF)
oss
200
150
100
I
(A)
2
2
Dq
50
0
0
0.9
0.9
oss
as a function of drain-source voltage V
10
P
(W)
300
-
L(PEP)
20
P
(W)
-
70
L(AV)
30
G
(dB)
> 14
> 14
40
p
001aad743
V
DS
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(V)
50
(%)
> 40
> 26
D
DS
IMD3
(dBc)
; typical values
BLF872
25
25
(dB)
-
G
1
4 of 16
p