BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 5

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Philips Semiconductors
BLF872_1
Product data sheet
Fig 2. CW power gain G
Fig 3. 2-tone power gain G
(dB)
G
p
16
14
12
10
V
typical values
V
I
distortion IMD as a function of average output
power P
Dq
0
DS
DS
= 2
= 32 V; f = 860 MHz; I
= 32 V; f
0.9 A; T
50
L(AV)
1
= 860 MHz; f
; typical values
h
100
= 25 C.
p
IMD3
IMD5
, drain efficiency
G
p
p
and intermodulation
Dq
150
2
= 860.1 MHz;
= 2
(dB)
G
p
16
14
12
10
0.9 A; T
0
200
P
001aad745
L(AV)
h
(W)
Rev. 01 — 20 February 2006
= 25 C.
D
250
100
and power added efficiency
0
20
40
60
(dBc)
G
IMD
D
p
add
200
Fig 4. 2-tone power gain G
(dB)
G
p
16
14
12
10
300
V
I
power added efficiency
average output power P
Dq
0
DS
P
001aad744
= 2
L
= 32 V; f
(W)
0.9 A; T
50
400
add
1
60
40
20
0
D
= 860 MHz; f
,
(%)
as a function of output power P
h
add
100
= 25 C.
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
G
add
D
p
p
, drain efficiency
150
2
L(AV)
= 860.1 MHz;
add
; typical values
as a function of
200
P
001aad746
BLF872
L(AV)
(W)
250
D
60
40
20
0
D
and
(%)
,
5 of 16
add
L
;