BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 13

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Philips Semiconductors
9. Package outline
Fig 13. Package outline SOT800-1
BLF872_1
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
SOT800-1
VERSION
OUTLINE
0.260
0.244
H
6.6
6.2
A
U
A
2
10.55
10.45
0.415
0.411
A
L
b
0.006
0.004
0.15
0.10
c
IEC
1.201
1.177
30.5
29.9
D
1.224
1.216
31.1
30.9
D
1
0.575
0.567
14.6
14.4
JEDEC
E
y
1
3
0.602
0.594
15.3
15.1
REFERENCES
E
1
Rev. 01 — 20 February 2006
D
U
D
q
e
1
1
12.7
0.5
e
0
0.089
0.079
2.26
2.00
JEITA
F
scale
2
4
b
5
0.898
0.858
22.8
21.8
H
10 mm
0.146
0.130
3.7
3.3
L
w2
0.140
0.137
M
3.56
3.49
p
C
5
M
0.134
0.122
3.4
3.1
Q
P
F
C
B
1.516
38.5
w1
q
PROJECTION
UHF power LDMOS transistor
EUROPEAN
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
M
1.752
1.740
44.5
44.2
A
U
1
M
E
B
1
0.606
0.591
15.4
15.0
U
M
2
Q
0.25
0.01
w
BLF872
1
ISSUE DATE
c
05-06-02
05-06-07
0.25
0.01
w
E
2
SOT800-1
0.002
0.05
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y