BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 10

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Fig 10. Class-AB common-source broadband test circuit; V
C30
C28
C29
C31
50
+V
+V
G1(test)
G2(test)
R5
R3
R1
C25
R2
R4
R6
C26
C27
L13
L13
B2
C24
C32
L12
L12
C23
C22
L11
L11
D1(test)
C21
L10
L10
C20
, V
D2(test)
C1
, V
L1
L1
G1(test)
C2
L5
L5
and V
L2
L2
C3
G2(test)
C4
C10
C9
L3
L3
are drain and gate test voltages
C5
C6
C7
B1
L6
L6
C11
C12
C13
C14
L4
C15
C16
C8
C17
C18
001aad752
50
+V
+V
D1(test)
D2(test)