BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 6

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Philips Semiconductors
BLF872_1
Product data sheet
Fig 5. DVB-T (8K OFDM) power gain G
(dB)
G
p
20
16
12
8
4
0
IMD at 4.3 MHz from frequency center.
order intermodulation distortion
(high-frequency component IMD3
low-frequency component IMD3
function of average output power P
values
0
40
IMD3
IMD3
G
80
p
LO
HI
120
P
L(AV)
001aad748
p
LO
and third
HI
) as a
L(AV)
(W)
and
Rev. 01 — 20 February 2006
160
; typical
0
10
20
30
40
50
(dBc)
IMD
Fig 6. DVB-T (8K OFDM) power gain G
(dB)
G
p
20
16
12
8
4
0
V
efficiency
as a function of average output power P
typical values
0
DS
= 32 V; f = 858 MHz; I
40
D
and power added efficiency
UHF power LDMOS transistor
G
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
add
D
p
80
Dq
= 2
120
0.9 A; T
P
L(AV)
p
001aad747
BLF872
, drain
(W)
h
= 25 C.
160
50
40
30
20
10
0
L(AV)
D
(%)
,
add
6 of 16
add
;