BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 14

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Philips Semiconductors
10. Abbreviations
11. Revision history
Table 10:
BLF872_1
Product data sheet
Document ID
BLF872_1
Revision history
Release date
20060220
Table 9:
Acronym
CDMA
CW
DVB
EDGE
ESR
EVM
GSM
IMD
LDMOS
OFDM
PCB
PEP
RF
SMD
TTF
VSWR
Abbreviations
Data sheet status
Product data sheet
Description
Code Division Multiple Access
Continuous Wave
Digital Video Broadcast
Enhanced Data rates for GSM Evolution
Equivalent Series Resistance
Error Vector Magnitude
Global System for Mobile communications
InterModulation Distortion
Laterally Diffused Metal Oxide Semiconductor
Orthogonal Frequency Division Multiplexing
Printed-Circuit Board
Peak Envelope Power
Radio Frequency
Surface Mount Device
Time To Failure
Voltage Standing Wave Ratio
Rev. 01 — 20 February 2006
Change notice
-
Doc. number
-
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Supersedes
-
BLF872
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