BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 3

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Philips Semiconductors
4. Limiting values
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
5. Thermal characteristics
Table 5:
[1]
[2]
6. Characteristics
Table 6:
T
[1]
[2]
BLF872_1
Product data sheet
Symbol
V
V
T
T
Symbol
R
R
Symbol
V
V
I
I
I
g
R
C
C
C
DSS
DSX
GSS
j
fs
stg
j
DS
GS
(BR)DSS
GSth
th(j-c)
th(j-h)
DSon
iss
oss
rss
= 25 C unless otherwise specified.
T
R
I
Capacitance values without internal matching.
D
h
th(j-h)
is the drain current.
is the heatsink temperature.
is dependent on the applied thermal compound and clamping/mounting of the device.
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Parameter
thermal resistance from junction to case
thermal resistance from junction to heatsink
Rev. 01 — 20 February 2006
Conditions
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
GS
GS
GS
= 20 V; I
= 0 V; I
= 0 V; V
= V
= 10 V; V
= 20 V; I
= V
= 0 V; V
= 0 V; V
= 0 V; V
GSth
GSth
Conditions
D
[1]
+ 6 V; V
+ 6 V; I
DS
DS
DS
DS
D
D
= 5 mA
DS
= 250 mA
= 16 A
= 32 V
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 0 V
D
DS
Conditions
T
T
= 9 A
h
h
= 10 V
= 25 C
= 25 C
[2]
[2]
[2]
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
65
5.2
-
-
-
-
-
-
-
-
Min
-
-
-
65
[1] [2]
[1]
Typ
-
-
-
41
-
10
80
200
70
2.5
Max
65
+150
200
Typ
0.32
0.4
13
BLF872
Max
-
6.2
2.2
-
40
-
-
-
-
-
Unit
V
V
Unit
K/W
K/W
C
C
Unit
V
V
A
nA
S
m
pF
pF
pF
3 of 16
A