BLF872,112 NXP Semiconductors, BLF872,112 Datasheet

TRANSISTOR RF LDMOS SOT800

BLF872,112

Manufacturer Part Number
BLF872,112
Description
TRANSISTOR RF LDMOS SOT800
Manufacturer
NXP Semiconductors
Datasheet
1.BLF872112.pdf (16 pages)

Specifications of BLF872,112

Package / Case
SOT800
Transistor Type
LDMOS
Frequency
860MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
2.2µA
Current - Test
900mA
Voltage - Test
32V
Power - Output
300W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2408
934058888112
BLF872
BLF872
1. Product profile
CAUTION
1.1 General description
1.2 Features
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Typical 2-tone performance at 860 MHz, a drain-source voltage V
quiescent drain current I
Typical DVB performance at 858 MHz, a drain-source voltage V
quiescent drain current I
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
Designed for broadband operation (UHF band)
Excellent reliability
Internal input and output matching for high gain and optimum broadband operation
Source on underside eliminates DC isolators, reducing common-mode inductance
Easy power control
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Peak envelope power load power P
Gain G
Drain efficiency
Third order intermodulation distortion IMD3 = 28 dBc
Average output power P
Gain G
Drain efficiency
Third order intermodulation distortion IMD3 = 28 dBc (4.3 MHz from center
frequency)
p
p
= 15 dB
= 15 dB
D
D
= 43 %
= 30 %
Dq
Dq
= 2
= 2
L(AV)
= 70 W
0.9 A:
0.9 A:
L(PEP)
= 300 W
Product data sheet
DS
DS
of 32 V and a
of 32 V and a

Related parts for BLF872,112

Image
Part Number
Description
Manufacturer
Datasheet
Request R
BLF872
Part Number:
BLF872
Description:
RF MOSFET Small Signal RF LDMOS 300W UHF
Manufacturer:
NXP Semiconductors
Datasheet:
BLF872112.pdf (16 pages)
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors

BLF872,112 Summary of contents

Page 1

BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the ...

Page 2

Philips Semiconductors 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 1.4 Quick reference data Table 1: Typical RF performance at V test circuit. Mode of operation CW, class AB 2-tone, class AB PAL ...

Page 3

Philips Semiconductors 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V gate-source voltage GS T storage temperature stg T junction temperature j 5. Thermal characteristics ...

Page 4

Philips Semiconductors Fig 1. Output capacitance C 7. Application information Table 7: RF performance in a common-source 860 MHz narrowband test circuit unless otherwise specified. h Mode of operation f (MHz) 2-tone, class ...

Page 5

Philips Semiconductors 860 MHz Fig 2. CW power gain G , drain efficiency p typical values (dB) 14 IMD3 IMD5 100 150 ...

Page 6

Philips Semiconductors (dB IMD3 HI 8 IMD3 IMD at 4.3 MHz from frequency center. Fig 5. DVB-T (8K OFDM) power gain G order intermodulation distortion (high-frequency component ...

Page 7

Philips Semiconductors 7.1 Broadband operation data Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. 300 P P o(sync)M (W) 200 P L(AV) 100 0 400 500 600 700 0.9 ...

Page 8

Philips Semiconductors 7.3 Reliability 7 10 Years (7) ( TTF; 0.1 % failure fraction; best estimate values. ( 100 110 ...

Page 9

Philips Semiconductors Table 8: List of components For test circuit, see Figure 10, 11 Component Description C15, C16 ceramic capacitor C17, C18 electrolytic capacitor C20 multilayer ceramic chip capacitor C21 tekelec trimmer C22 multilayer ceramic chip capacitor C23 multilayer ceramic ...

Page 10

G1(test) C30 R5 R3 C28 C24 R1 C26 L12 L13 50 C25 B2 C23 L13 L12 C27 R2 C32 C29 R4 R6 C31 +V G2(test) Fig 10. Class-AB common-source broadband test circuit L10 L2 L11 ...

Page 11

Fig 11. Printed-circuit board for class-AB broadband test circuit 95 mm 001aad753 ...

Page 12

C30 +V G1(test C28 R1 B2 L13 L12 C26 C23 C24 C25 C32 C27 L12 10 mm L13 broadband R2 BLF872 input C29 C31 G2(test) Fig 12. Component layout for class-AB broadband test circuit 32 ...

Page 13

Philips Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 6.6 10.55 0.15 30.5 mm ...

Page 14

Philips Semiconductors 10. Abbreviations Table 9: Acronym CDMA CW DVB EDGE ESR EVM GSM IMD LDMOS OFDM PCB PEP RF SMD TTF VSWR 11. Revision history Table 10: Revision history Document ID Release date BLF872_1 20060220 BLF872_1 Product data sheet ...

Page 15

Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 16

Philips Semiconductors 17. Contents 1 Product profi 1.1 General description ...

Related keywords