STEVAL-IFS006V1 STMicroelectronics, STEVAL-IFS006V1 Datasheet - Page 106

BOARD EVAL 8BIT MICRO + TDE1708

STEVAL-IFS006V1

Manufacturer Part Number
STEVAL-IFS006V1
Description
BOARD EVAL 8BIT MICRO + TDE1708
Manufacturer
STMicroelectronics

Specifications of STEVAL-IFS006V1

Design Resources
STEVAL-IFS006V1 Bill of Material
Sensor Type
Proximity
Interface
I²C
Voltage - Supply
6 V ~ 48 V
Embedded
Yes, MCU, 8-Bit
Utilized Ic / Part
ST7FLITEUS5, TDE1708
Processor To Be Evaluated
ST7LITEUS5
Data Bus Width
8 bit
Operating Supply Voltage
6 V to 48 V
Silicon Manufacturer
ST Micro
Silicon Core Number
TDE1708DFT
Kit Application Type
Sensing - Touch / Proximity
Application Sub Type
Proximity Switch
Kit Contents
Board
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sensitivity
-
Sensing Range
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6403
STEVAL-IFS006V1

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Electrical characteristics
12.7.2
12.7.3
106/136
Electromagnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 60.
1. Data based on characterization results, not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: Human Body Model. This test conforms to the JESD22-A114A/A115A
standard.
Table 61.
1. Data based on characterization results, not tested in production.
Static and dynamic latchup
Symbol
V
Symbol
ESD(HBM)
S
EMI
LU: 3 complementary static tests are required on 10 parts to assess the latchup
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latchup standard. For more details,
refer to the application note AN1181.
DLU: Electrostatic discharges (one positive then one negative test) are applied to each
pin of 3 samples when the micro is running to assess the latchup performance in
Peak level
Electrostatic discharge voltage
(human body model)
EMI characteristics
Absolute maximum ratings
Parameter
Ratings
V
SO8 package,
conforming to SAE J
1752/3
DD
=5 V, T
(1)
Conditions
A
=+25 °C,
T
A
=+25°C
Conditions
0.1 MHz to
30 MHz
30 MHz to
130 MHz
130 MHz to
1 GHz
SAE EMI Level
frequency band
Monitored
ST7LITEUS2, ST7LITEUS5
[f
Max vs.
OSC
-/8 MHz
Maximum
value
> 4000
21
23
10
3
/f
CPU
(1)
]
dBμV
Unit
Unit
-
V

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