MXHV9910BTR IXYS, MXHV9910BTR Datasheet - Page 97

• Manufacturer Part Number: MXHV9910BTR
• Description: IC LED DRIVER HIGH BRIGHT 8-SOIC
• Manufacturer: IXYS
• Type: HBLED Driverr

Specifications of MXHV9910BTR

• Topology: AC DC Offline Switcher, PWM, Step-Down (Buck)
• Number Of Outputs: 1
• Internal Driver: No
• Type - Primary: Backlight
• Type - Secondary: High Brightness LED (HBLED), RGB
• Frequency: 64kHz
• Voltage - Supply: 8 V ~ 450 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 85°C
• Internal Switch(s): No
• Efficiency: 90%
• Operating Supply Voltage: 7.2 V to 8.4 V
• Maximum Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Current - Output / Channel: -

ISOPLUS i4-PAC™
 FII 24N17AH1
 IXGF 32N170
 IXBF 14N250
 New
 IXTF 280N055T
 IXTF 250N075T
 IXTF 230N085T
 IXTF 200N10T
 FMD 15-06KC5
 FMD 47-06KC5
 FDM 15-06KC5
 FDM 47-06KC5
 New
 New
 New
Type
with MOSFET
FMM 150-0075P
FMM 75-01F
FMM 65-015P
IXKF 40N60SCD1
IXFF 24N100
FMD 21-05QC
FMD 40-06KC
FDM 100-0045SP
Type
with IGBT
FII 30-06D
FII 40-06D
FII 30-12E
FII 50-12E
FID 60-06D
IXBF 9N160G
IXBF 40N160
IXLF 19N250A
Type
AC Switch
FMK 75-01F
FIO 50-12BD
Type
Bipolar
FUS 45-0045B
FBS 10-06SC
FBS 16-06SC
FBE 22-06N1
FUE 30-12N1
FBO 16-12N
FBO 40-12N
FUO 22-12N
FUO 22-16N
FUO 50-16N
CMA 30P1600FC
CMA 50P1600FC
CS 20-22moF1
CS 20-25mo1F
DSEE 55-24N1F
DHH 55-36N1F
single part, high voltage V Thyristor
single part, high voltage V Thyristor
phase leg K NPT IGBT
phase leg B Trench MOSFET
C MOSFET Common Source
N 1-phase Bridge and IGBT
Configu-
Configu-
ration
ration
single
single
boost
boost
buck
3-phase bridge
1-phase bridge
1-phase bridge
1-phase bridge
3-phase bridge
1-phase bridge
1-phase bridge
3-phase bridge
3-phase bridge
3-phase bridge
Configuration
phase leg
phase leg
phase leg
phase leg
Circuit diagram / Technology
M NPT IGBT & HiPerFRED
H
G CoolMOS
G CoolMOS
CoolMOS™ is a trademark of Infineon Technologies
K NPT IGBT
K NPT3 IGBT
K NPT3 IGBT
K High voltage IGBT
B HiPerFET
B Trench MOSFET
A Trench MOSFET
A Trench MOSFET
A Trench MOSFET
A Trench MOSFET
A HiPerFET
E HiPerFET & HiPerDynFRED
E CoolMOS
E CoolMOS
E CoolMOS
F Trench MOSFET & Schottky
Circuit diagram / Technology
J BiMOSFET
J BiMOSFET
J BiMOSFET
I High voltage IGBT
I High voltage IGBT
Circuit diagram / Technology
CoolMOS
HiPerFRED as free wheel. Diode
™
™
™
™
™
™
Q Si-Carbide
Q Si-Carbide
R HiperFRED
S HiperFRED
R Rectifier
R Rectifier
S Rectifier
S Rectifier
S Rectifier
U Thyristor
U Thyristor
P HiperFRED
P Sonic-FRD
T Schottky
& serial Schottky &
& HiPerDynFRED
& HiPerDynFRED
& HiPerDynFRED
& HiPerDynFRED
& HiPerDynFRED
Circuit diagram /
Diode type
X024a
2x 600
2x 600
2x 1200
2x 1200
2x 1700
V
2x 75
2x 100
2x 150
V
1600
1600
1700
2500
2500
CES
1000
V
600
100
600
500
600
600
600
600
600
2x 1600
2x 1600
2x 1200
2x 1800
V
DSS
Voltage
Voltage
55
75
85
45
1200
100
1200
1200
1200
1200
1600
1600
2200
2500
T
V
V
600
600
600
C
45
= 25°C T
I
25°C
T
C25
A
150
160
140
130
120
100
30
40
50
50
18
65
28
26
32
X024b
I
75
65
38
22
21
D25
C
A
7
=
under development
under development
under development
contact factory
under development
C
90°C
= 90°C T
T
120
I
contact factory
contact factory
I
50
50
25
15
15
80
C90
A
18
25
32
32
11
40
16
12
19
D90
C
A
4
T
T
=
Current
C
C
2x 50
I
= 25°C
D(AV)M
= 90°C
32
45
20
30
22
40
27
27
50
30
50
18
18
55
50
A
A
V
R
max 4.0
max 4.4
max 5.3
max 6.3
CE(sat)
C
DS(on)
25°C
T
320.0
180.0
= 25°C
mW
4.5
1.6
4.9
6.2
3.5
3.2
1.9
1.8
2.4
2.0
20.0
13.0
60.0
V
C
X024c
4.7
5.7
=
typ.
typ.
X024a
X024a
X024a
X024a
X024b
X024a
X024d
X024c
X024c
X024a
X024a
X024c
X024c
Fig.
Fig.
Fig.
Fig.
No.
No.
No.
No.
on pages O-30...O-52
Outline drawings
Package style
A
C
E
G
K
S
Q
M
U
I
X024d
N
P
V
L
D
F
B
H
R
T
J
75