MXHV9910BTR IXYS, MXHV9910BTR Datasheet - Page 181

• Manufacturer Part Number: MXHV9910BTR
• Description: IC LED DRIVER HIGH BRIGHT 8-SOIC
• Manufacturer: IXYS
• Type: HBLED Driverr

Specifications of MXHV9910BTR

• Topology: AC DC Offline Switcher, PWM, Step-Down (Buck)
• Number Of Outputs: 1
• Internal Driver: No
• Type - Primary: Backlight
• Type - Secondary: High Brightness LED (HBLED), RGB
• Frequency: 64kHz
• Voltage - Supply: 8 V ~ 450 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 85°C
• Internal Switch(s): No
• Efficiency: 90%
• Operating Supply Voltage: 7.2 V to 8.4 V
• Maximum Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Current - Output / Channel: -

Integrated Circuits
ISOSMART
Features
• 1200 V or greater low- to high-side isolation
• Drives power systems operating from industrial AC mains
• dv/dt immunity of greater than 50 V/ns
• Proprietary low- to high-side level-translation & communication
• On-chip negative gate-drive supply to ensure power
• 5 V logic compatible HCMOS input logic with hysteresis
• 20 ns switching time with 1000 pF load: 100 ns switching
• 100 ns propagation delay time
• 2 A peak output drive capability
• Self shut-down of output in reponse to over-current or
• Under-voltage lockout protection
• Protection from cross conduction of the half bridge
• Logic compatible fault indication from both low and high
Applications
• 1-, 2- or 3-phase motor control
• Switch mode power supplies (SMPS)
• 1- or 3-phase UPS systems
• Induction heating and welding
• Switching amplifiers
• General power conversion circuits
These chipsets are intended to drive the gates of a pair of pow-
er MOSFETs or IGBTs connected in the totem-pole (phase
leg) configuration used in PWM inverter bridges for variable
speed AC motor drives, or in any other application requiring
half bridge power circuits.
Each chipset consists of a pair of DIP ICs interconnected by
two TX02-4400 signal pulse transformers. Proprietary voltage
trans-lation techniques permit the transmission of ground
(0-Volt) referenced gate-control signals for both the upper half
of the phase leg with its high-side floating source/emitter, and
to the 0-Volt referenced low-side.
The chipset is noise immunized to commutation dv/dts of 50 V/ns
between the two halves. The IXBD4410/11 outputs an on-chip
IXBD 4410PI
IXBD 4411PI
IXBD 4410SI
IXBD 4411SI
TX 02-4400JI
TX 02-4400PI
MOSFET or IGBT turn-off under all conditions
time with 10 000 pF load
short-circuit
side driver
Type
®
Half Bridge Driver Chipset: IXBD4410/4411 and TX02-4400 Pulse Transformer
Full-Feature Low-Side Driver
Full-Feature High-Side Driver
Full-Feature Low-Side Driver
Full-Feature High-Side Driver
Isolation transformer
Descirption
16-pin PDIP
16-pin SOP-CT(W)
8-pin PDIP-SM
8-pin PDIP
Block diagram IXBD4410
Block diagram IXBD 4411
generated negative gate voltage to inhibit possible Miller-indu-
ced IGBT turn on created by free-wheel diode commutations.
This version also features a 0-Volt referenced fault-signal flag
monitoring both high and low side drivers for sophisticated sys-
tem protection. Both models incorporate shut-down circuitry to
disable gate driver signals when an overcurrent is detected, eit-
her through desaturation of the driven power switch or by direct
measurement of the switch current. Simultaneous conduction
of upper and lower signal input logic. C-MOS technology re-
duces stand-by currents drawn from the single external power
supply to low levels, and chipset operation to over 20 kHz is
possible. The EVBD4400 evaluation board is also available to
facilitate design-in activity.
Package
Temperature
-55 to -125°C
-40 to +85°C
-40 to +85°C
Range
Outline drawings
O-30...O-52
on pages
X505
X525a
X502b
X502
159