MXHV9910BTR IXYS, MXHV9910BTR Datasheet - Page 118

• Manufacturer Part Number: MXHV9910BTR
• Description: IC LED DRIVER HIGH BRIGHT 8-SOIC
• Manufacturer: IXYS
• Type: HBLED Driverr

Specifications of MXHV9910BTR

• Topology: AC DC Offline Switcher, PWM, Step-Down (Buck)
• Number Of Outputs: 1
• Internal Driver: No
• Type - Primary: Backlight
• Type - Secondary: High Brightness LED (HBLED), RGB
• Frequency: 64kHz
• Voltage - Supply: 8 V ~ 450 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 85°C
• Internal Switch(s): No
• Efficiency: 90%
• Operating Supply Voltage: 7.2 V to 8.4 V
• Maximum Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Current - Output / Channel: -

Power MOSFETs and MOSFET Modules
Trench Power MOSFET
IXYS Trench Power MOSFETs are
ideally suited for low voltage, high cur-
rent applications. These MOSFETs
feature an exceedingly low R
guaranteeing very low power dissipa-
tion in low voltage, high current power
switching applications.
This combined with wide ranging ope-
rating junction temperature from -40°C
to 175°C make them suitable candi-
dates for automobile applications and
other similar demanding applications
in harsh environments.
IXYS has currently a wide portfolio of
Trench Gate MOSFETs with ratings
from 55V to 300V and 42A to 220A.
By optimization of several parameters,
IXYS Corporation has created a spe-
cial higher voltage rated Trench Gate
MOSFET for critical applications. Like-
wise, special Trench Gate MOSFET
modules find variety of applications
in very demanding automotive seg-
ments.
TrenchT2™ Power MOSFET
IXYS’ next generation TrenchT2™
Power MOSFETs are designed and
optimized to meet the thermal and
electrical demands of today’s power
management systems with low ener-
gy losses.
Utilizing IXYS’ advanced trench tech-
nology,
MOSFETs feature an exceedingly
low on-state resistance R
guaranteeing very low power dissipa-
tion. In addition, they provide for very
low conduction and switching losses,
thereby making them highly efficient
devices. These robust devices are
rugged in unclamped inductive swit-
ching (UIS) applications and provide
excellent avalanche capabilities. Ad-
ditional features include fast switching
speeds, low package inductance, and a
175°C junction operating temperature.
IXYS’ TrenchT2™ Power MOSFETs
provide designers low voltage, high
current solutions for improved efficien-
cy in automotive electronics, electrical
vehicles and power management sys-
tems. Common applications include
battery chargers, synchronous rec-
tification, DC/DC converters, power
train management, off-line SMPS and
UPS, primary switches for 24V/48V
systems, distributed power architec-
ture, power amplifiers and brushless
motor control.
96
these TrenchT2™
DS(on)
DS(on)
Power
, thus
, thus
Polar™ MOSFET
Polar™ MOSFETs feature a proprie-
tary cell design and process that has
resulted in a MOSFET with 30% re-
duction in R
with a decrease in gate charge. IXYS
has also reduced the wafer thickness,
which substantially reduces thermal
resistance. The combination of lower
R
her power dissipation capability has
resulted in a new family of MOSFETs,
which will increase the cost effec-
tiveness in switch mode power supply
(SMPS) applications.
IXYS’ Polar™ HiPerFET
IXYS’ Polar™ HiPerFETs combine the
strengths of the Polar family with a fas-
ter body diode, whose reverse recove-
ry time (t
suitable for phase-shift bridges, motor
control and uninterruptible power sup-
ply applications (UPS). This family of
HiPerFETs bring to the table a win-win
situation with lowest R
low Q
Legacy (Standard) MOSFET
Legacy (Standard) MOSFETs are
designed to provide superior perfor-
mance and ruggedness in high vol-
tage switching applications. Major
improvements are continuing to be
made using high-cell density desi-
gns processed on thin silicon wafers
for lower thermal resistance. These
Power MOSFETs provide significantly
higher power handling capability than
industry standard MOSFETs.
Legacy HiPerFET™
IXYS’ family of HiPerFET™ Power
MOSFETs are optimized to provide
superior intrinsic rectifier dv/dt rugge-
dness while eliminating the need for
discrete, fast recovery “freewheeling”
diodes in a broad range of power con-
version and control applications.
DS(on)
, lower gate charge Q
g
, and a faster body diode.
rr
) is reduced to make them
DS(on)
per unit area along
DS(on)
, low R
g
and hig-
thJC
,
This class of Power MOSFETs uses
IXYS’ HDMOSII™ process, improving
the ruggedness of the FET while redu-
cing the reverse recovery time of the
intrinsic rectifier to less than 200ns.
The performance of the intrinsic rec-
tifier is comparable to discrete high
voltage fast recovery rectifiers, and is
tailored to minimize power dissipation
and switching stress in the MOSFET.
These devices have an improved
stress withstand capability in appli-
cations where the intrinsic rectifier is
used as a free-wheeling diode. Both
static and commutating dV/dt has
been improved significantly to typical-
ly 60 V/ns and 20 V/ns, respectively.
This offers a significant margin of sa-
fety in the high stress conditions found
in many types of inductive power swit-
ching applications.
Q-Class Power MOSFET
Q-Class Power MOSFETs (identified
by the suffix letter Q) feature a signifi-
cantly low Gate Charge (Q
Capacitance (C
allow for a faster switching device that
requires less energy for switching.
Q-Class HiPerFET™
Q-Class HiPerFET™ Power MOS-
FETs (identified by the suffix letter Q)
are upgraded versions of the HiPer-
FET™ Power MOSFETs family. This
Q-Class family of HiPerFETs feature
a significantly reduced gate charge
(Q
enabling improved switching perfor-
mance of the device. Therefore, these
devices have the same applications
as HiPerFET™ and allow higher fre-
quency operation. These devices are
rugged in unclamped inductive swit-
ching applications and provide excel-
lent avalanche characteristics.
Q2-Class
(identified by the suffix letter Q2) are
the result of a revolutionary new chip
design, which decreases the MOS-
FETs total gate charge (Q
Miller capacitance (C
taining the ruggedness and fast swit-
ching intrinsic diode of the company’s
current HiPerFET™ product line. The
result is a MOSFET with dramatically
improved switching efficiencies and
thus enabling higher frequency opera-
tion and smaller power supplies.
g
) and Miller capacitance (C
HiPerFET™
rss
). This combination
rss
), while main-
g
) and Miller
MOSFETs
g
) and the
rss
) thus