MXHV9910BTR IXYS, MXHV9910BTR Datasheet - Page 20

• Manufacturer Part Number: MXHV9910BTR
• Description: IC LED DRIVER HIGH BRIGHT 8-SOIC
• Manufacturer: IXYS
• Type: HBLED Driverr

Specifications of MXHV9910BTR

• Topology: AC DC Offline Switcher, PWM, Step-Down (Buck)
• Number Of Outputs: 1
• Internal Driver: No
• Type - Primary: Backlight
• Type - Secondary: High Brightness LED (HBLED), RGB
• Frequency: 64kHz
• Voltage - Supply: 8 V ~ 450 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 85°C
• Internal Switch(s): No
• Efficiency: 90%
• Operating Supply Voltage: 7.2 V to 8.4 V
• Maximum Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Current - Output / Channel: -

Nomenclature
W
W
M
F
E
N
R
P
K
A
T
S
H
G
Y
XX
CAPSULE DEVICES
0646
0646
*
W
W
Y
K
J
L
Q
D
N
M
P
V
H
Z
T
E
F
G
C
A
B
C
D
F
G
H
J
K
L
M
R
S
T
V
W
Y
15
15
0
0
P
(Sample)
Device Type
Rectifier diode
Fast/soft recovery diode
Extra fast diode
HP Sonic-FRD
Phase control thyristor
Distributed gate thyristor
Fast turn-off thyristor
Medium voltage thyristor
Asymmetric thyristor (refer to Factory)
Press-Pack GBT capsule
Symmetrical Gate Turn-off thyristor
Fast Symmetrical Gate Turn-off thyristors
Anode Short Gate Turn-off thyristors
Pulse Thyristors
Device nominal current rating
For devices exceeding 9999 amperes, digit 5 of the part number changes to C, D or E
Pole face Diameter
19 mm
25 mm
29 mm
32 mm
34 mm
38 mm
44.4 mm
47 mm
50 mm
57 mm
63 mm
68 mm
73 mm
75 mm
85 mm
99 mm
125 mm
Housing Type
GBT Capsule 26 mm (N, T, E, G)
Welding Diodes 8 mm (D, P)
Standard outline 14 mm (W, Y) 16 mm (K)
Slim pack 21 mm (N), 24 mm (V, Z), Thick pack 26 mm (Z, F, G)
Slim pack 19.5 mm (L), Thick pack 26 mm (K, N, V),
Thick pack 35 mm (L, N)
Slim pack 14 mm (N), Thick pack 26 mm(Y) or slotted 32 mm (V)
Slim pack 19.5 mm (N) or Special thick pack 25.8 mm (V)
Wespack 14.5 mm (J, Q, M, H)
Wespack 26 mm (Q, M), -GTO 26 mm (L, N), 35 mm (V)
Wespack 33 mm (H)
Wespack 14 mm (Q), Standard 26 mm (N)
S‘ housing 14 mm (Y), 26 mm (L), 27 mm (N)
C’ housing explosion rated (N, V, Z, T, F)
D’ housing explosion rated (V, Z, T)
F’ housing explosion rated (Z)
C’ housing extended explosion rating (Z)
Voltage grade = V
t
PN diode (Product Groups: W, M, F and E)
q
code or V
RRM
TM
% of V
33 mm (V)
RRM
/ V
DRM
DRM
for GTO thyristors, or for Press-Pack IGBTs
÷ 100
36 mm (F, G)
26 mm (L, Q, M, T, E)
37 mm (Z)
35 mmm (Z)
C
D
G
H
0
A
B
E
F
K
L
J
V
D
Y
0
RRM
No code
% of V
10
12
15
20
25
30
35
40
50
60
65
WESTCODE
tq Code
26.5 mm (N)
DRM
for GTO’s
W
M
N
P
R
S
V
X
Y
T
Z
100 V
100
80
1000
100
120
140
160
200
250
300
400
500
70