NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 58
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
Package mechanical
Figure 37. VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.80 mm pitch, package outline
1. Drawing is not to scale
Table 28.
58/61
Symbol
FD1
FE1
ddd
SD
D1
D2
FD
FE
SE
A1
A2
E1
E2
A
D
E
b
e
VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.80 mm pitch, package mechanical data
E
E2
11.00
0.65
0.45
9.00
4.00
7.20
5.60
8.80
0.80
2.50
0.90
2.70
1.10
0.40
0.40
Typ
BALL "A1"
FD1
E1
A
millimeters
e
10.90
0.25
0.40
8.90
Min
–
–
–
SD
D2
D1
D
FD
11.10
Max
1.05
0.50
9.10
0.10
A1
–
–
–
e
SE
b
FE1
A2
FE
0.026
0.018
0.354
0.157
0.283
0.433
0.220
0.346
0.031
0.098
0.035
0.106
0.043
0.016
0.016
Typ
NAND01G-B2B, NAND02G-B2C
BGA-Z75
inches
0.010
0.016
0.350
0.429
ddd
Min
–
–
–
0.041
0.020
0.358
0.004
0.437
Max
–
–
–