NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 19
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
NAND01G-B2B, NAND02G-B2C
Table 7.
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A27 is for 2-Gbit devices only.
Table 8.
Table 9.
cycle
5
Bus
2
3
1
4
th(2)
nd
st
rd
th
(1)
A12 - A17
A18 - A27
A18 - A28
A11 - A16
A17 - A26
A17 - A27
I/O15
I/O8-
Address
A0 - A11
Address
A0 - A10
X
X
X
X
X
Address insertion, x16 devices
Address definitions, x8 devices
Address definitions, x16 devices
I/O7
A18
A26
V
V
A7
IL
IL
I/O6
A17
A25
V
V
A6
IL
IL
I/O5
A16
A24
Block address
Block address
Block address
Block address
V
V
A5
IL
IL
I/O4
A15
A23
A4
V
V
IL
IL
Column address
Column address
Page address
Page address
Definition
Definition
I/O3
A14
A22
V
V
A3
IL
IL
I/O2
A10
A13
A21
V
A2
IL
1-Gbit device
2-Gbit device
1-Gbit device
2-Gbit device
Bus operations
I/O1
A12
A20
V
A1
A9
IL
I/O0
A11
A19
A27
A0
A8
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