NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 55
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
NAND01G-B2B, NAND02G-B2C
11.2
Figure 34. Data protection
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
low (V
figure.
DD
V DD
W
IL
detection circuit disables all NAND operations, if V
DD
) to guarantee hardware protection during power transitions as shown in the below
Nominal Range
range from V
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
is below the V
DC and AC parameters
Ai11086
LKO
threshold.
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