NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 40
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
Program and erase times and endurance cycles
9
40/61
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 18.
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
18.
Program, erase times and program erase endurance cycles
Parameters
100 000
Min
10
NAND flash
NAND01G-B2B, NAND02G-B2C
Typ
200
2
Max
700
3
cycles
years
Unit
ms
µs