NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 50
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
DC and AC parameters
Figure 25. Page read operation AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
50/61
RB
I/O
CL
AL
W
E
R
Command
Code
00h
cycle 1
Add.N
tWLWL
Address N Input
cycle 2
Add.N
cycle 3
Add.N
cycle 4
Add.N
tWHBH
cycle 5
Add.N
tWHBL
tBLBH1
30h
Busy
from Address N to Last Byte or Word in Page
tRLRH
Data
tALLRL2
N
Data
N+1
(Read Cycle time)
Data Output
NAND01G-B2B, NAND02G-B2C
tRLRL
Data
N+2
tEHQZ
tRHQZ
Data
Last
ai13109b