NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 42
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
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Part Number:
NAND01GW3B2AN6F
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DC and AC parameters
11
42/61
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 20: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 20.
Table 21.
1. T
2. Input/output capacitances double in stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
(1 TTL GATE and C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
Input capacitance
Input/output capacitance
Operating and AC measurement conditions
Capacitance
DD
L
)
L
)
)
A
ref
)
IN
Parameter
Parameter
and C
(1)
I/O
are not 100% tested.
(2)
3 V devices (2.7 - 3.6 V)
1.8 V devices
1.8 V devices
1.8 V devices
3 V devices
3 V devices
Grade 1
Grade 6
conditions. Designers should check that the
Test condition
V
V
IN
IL
= 0 V
= 0 V
NAND01G-B2B, NAND02G-B2C
Min
–40
1.7
2.7
0.4
0
0
NAND flash
Typ
V
8.35
DD
30
50
5
/2
Max
1.95
V
3.6
2.4
70
85
DD
Max
10
10
Units
pF
pF
kΩ
°C
°C
Unit
ns
V
V
V
V
V
pF
pF