NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 49
![IC FLASH 1GBIT 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
NAND01G-B2B, NAND02G-B2C
Figure 23. Read status register AC waveforms
Figure 24. Read electronic signature AC waveforms
1. Refer to
contained in byte 3 and 4.
I/O
CL
AL
CL
I/O
W
W
E
R
E
R
Table 14
for the values of the manufacturer and device codes, and to
Read Electronic
90h
Command
Signature
tCLHWH
(Data Setup time)
tELWH
tDVWH
1st Cycle
Address
tALLRL1
00h
(Read ES Access time)
70h
tRLQV
tWLWH
(Data Hold time)
tWHDX
tWHCLL
tWHEH
tDZRL
Byte1
Man.
code
tWHRL
tCLLRL
tRLQV
Device
code
tELQV
Byte2
Table 15
Byte3
00h
Status Register
and
tEHQZ
tRHQZ
Output
Table 16
see Note.1
DC and AC parameters
Byte4
for the information
ai13108
ai08667
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